目的 观察电针百会、神庭穴对缺血再灌注损伤大鼠学习记忆功能的影响,并探究其可能机制。方法 雄性Sprague-Dawley大鼠42只随机分为假手术组(n=12)和手术组(n=30)。手术组线栓法制备左侧大脑中动脉栓塞90 min再灌注模型,符合纳入标准的24只分为模型组(n=12)和电针组(n=12)。电针组电针百会、神庭共7 d。造模后2 h和干预后1 d、3 d、7 d,采用Longa神经行为学评分进行评定;干预后3 d起行Barnes迷宫实验检测,共5 d;干预7 d后,免疫荧光标记法检测缺血侧海马CA1区嘌呤受体P2X7的表达,酶联免疫吸附法检测海马CA1区白细胞介素-1β (IL-1β)、肿瘤坏死因子-α (TNF-α)。结果 干预后7 d,与模型组相比,电针组Longa评分降低(P<0.05);与假手术组相比,模型组Barnes迷宫逃避潜伏期显著延长(P<0.001),进入错误洞口次数显著增多(P<0.001);与模型组相比,电针组逃避潜伏期显著缩短(P<0.001),进入错误洞口次数显著减少(P<0.001);与假手术组比较,模型组P2X7受体平均光密度,IL-1β、TNF-α水平均显著提高(P<0.001);与模型组相比,电针组P2X7受体表达,IL-1β、TNF-α水平减少(P<0.05)。结论 电针百会、神庭穴能有效改善缺血再灌注损伤大鼠的学习记忆能力,可能与抑制海马CA1区嘌呤受体P2X7表达,改善缺血再灌注损伤大鼠海马CA1区神经炎症反应有关。
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